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Freescale Semiconductor Technical Data
Replaced by MRFG35003N6T1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRFG35003M6T1 Rev. 4, 1/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. * Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power -- 450 mWatts Power Gain -- 9 dB Efficiency -- 24% * 3 Watts P1dB @ 3.55 GHz * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003M6T1
3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Value 8 22.7 0.15 (2) -5 24 - 65 to +150 175 - 20 to +85
(2)
Unit Vdc W W/C Vdc dBm C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 6.6 (2) Unit C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Simulated.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRFG35003M6T1 1
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 6 Vdc, VGS = - 1.9 Vdc) Off State Current (VDS = 20 Vdc, VGS = - 2.5 Vdc) Gate- Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 6 Vdc, IDQ = 180 mA) Power Gain (VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz) Drain Efficiency (VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW, f = 3.55 GHz. Tune for Maximum Pout) Adjacent Channel Power Ratio (VDD = 6 Vdc, Pout = 450 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 - 1.1 8 -- 22 Typ 2.9 < 1.0 0.02 1.0 - 1.0 - 0.9 9 3 24 Max -- 100 1.0 15 - 0.7 - 0.7 -- -- -- Unit Adc Adc mAdc mAdc Vdc Vdc dB W %
ARCHIVE INFORMATION
ACPR
--
- 42
- 38
dBc
MRFG35003M6T1 2 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
VGS
VDD=6.0
C11
C10
C9
C8
C7
C6
C5 R1 C3 C4
C16
C17
C18
C19
C20
C21
C22
C14 C15
Z5 RF INPUT Z1 Z2 C1 C28 C27 C26 C2 Z3 Z4 Z6 C12 Z7 Z8 C13 Z9
Z10 C23 Z11 Z12 Z13 C24 C25 Z14 RF OUTPUT
ARCHIVE INFORMATION
Z1, Z14 Z2 Z3 Z4 Z5, Z10 Z6 Z7
0.044 x 0.125 Microstrip 0.440 x 0.105 Microstrip 0.340 x 0.357 Microstrip 0.380 x 0.426 Microstrip 0.527 x 0.015 Microstrip 0.027 x 0.347 Microstrip 0.538 x 0.115 Microstrip
Z8 Z9 Z11 Z12 Z13 PCB
0.439 x 0.136 Microstrip 0.062 x 0.280 Microstrip 0.349 x 0.302 Microstrip 0.055 x 0.130 Microstrip 0.044 x 0.502 Microstrip Rogers 4350, 0.020, r = 3.50
Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values
Designation C1 C2 C3, C4, C14, C15 C5, C16 C6, C17 C7, C18 C8, C19 C9, C20 C10, C21 C11, C22 C12, C13, C26, C27 C23, C25, C28 C24 R1 12 pF Chip Capacitor, ATC 0.1 pF Chip Capacitor (0805), AVX 3.9 pF Chip Capacitors (0805), AVX 10 pF Chip Capacitors, ATC 100 pF Chip Capacitors, ATC 100 pF Chip Capacitors, ATC 1000 pF Chip Capacitors, ATC 3.9 F Chip Capacitors, ATC 0.1 F Chip Capacitors, ATC 22 F, 35 V Tantalum Surface Mount Capacitor, Newark 0.3 pF Chip Capacitors (0805), AVX 1.0 pF Chip Capacitors (0805), AVX 7.5 pF Chip Capacitor, ATC 50 W Chip Resistor, Newark Description
MRFG35003M6T1 RF Device Data Freescale Semiconductor 3
ARCHIVE INFORMATION
C7 C6 + C11 R1 C4 C10 C9 C8 C5 C17 C16 C14
C18
+
C19
C20
C21 C22
C3
C15
ARCHIVE INFORMATION
C13 C23
C2
C1
C24 C28 C27 C26 C25
MRFG35003M6 Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35003M6T1 4 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
C12
TYPICAL CHARACTERISTICS
0 IRL, INPUT RETURN LOSS (dB) -10 -20 -30 -40 -50 -60 ACPR IRL 0 -10 -20 -30 -40 -50 -60 Pout, OUTPUT POWER (WATTS) ACPR (dBc)
VDS = 6 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA S = 0.898e-132.18_, L = 0.883e-134.70_
ARCHIVE INFORMATION
Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power
12 11.5 G T , TRANSDUCER GAIN (dB) 11 GT
40 PAE, POWER ADDED EFFICIENCY (%) 35 30 25 20 15 PAE VDS = 6 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA S = 0.898e-132.18_, L = 0.883e-134.70_ 1 Pout, OUTPUT POWER (WATTS) 10 5 0 0.1
10.5 10 9.5 9 8.5 8
Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown.
MRFG35003M6T1 RF Device Data Freescale Semiconductor 5
ARCHIVE INFORMATION
0.1
1
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 180 mA
f GHz 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 S11 |S11| 0.954 0.953 0.952 0.952 0.952 0.951 0.952 0.952 0.951 0.951 0.952 0.951 0.951 0.951 0.951 0.950 0.951 0.946 0.952 0.949 0.949 0.948 0.947 0.950 0.951 0.950 0.950 0.952 0.951 0.950 0.952 0.951 0.951 0.952 0.952 0.952 0.952 0.953 0.951 0.952 0.952 0.950 0.949 0.950 0.949 0.946 - 176.79 - 177.98 - 179.13 179.80 178.89 177.96 177.03 176.22 175.46 174.66 173.92 173.18 172.40 171.63 170.90 170.06 169.23 168.58 167.47 166.77 163.72 162.94 162.21 161.60 160.97 160.44 159.95 159.46 159.01 158.58 158.25 157.84 157.48 157.17 156.89 156.63 156.35 155.98 155.66 155.28 154.86 154.44 153.93 153.36 152.82 152.08 |S21| 3.859 3.527 3.250 3.019 2.818 2.643 2.491 2.354 2.234 2.124 2.025 1.934 1.851 1.774 1.704 1.638 1.576 1.518 1.463 1.411 1.360 1.317 1.276 1.237 1.201 1.167 1.135 1.105 1.076 1.049 1.024 1.000 0.979 0.959 0.939 0.921 0.904 0.888 0.873 0.860 0.848 0.836 0.826 0.815 0.806 0.797 S21 84.89 83.61 82.29 80.95 79.74 78.49 77.11 75.85 74.67 73.38 72.17 70.97 69.68 68.46 67.25 65.98 64.74 63.62 62.45 61.29 60.14 59.12 58.03 56.92 55.93 54.89 53.83 52.85 51.92 50.84 49.95 49.06 48.17 47.22 46.34 45.44 44.48 43.57 42.68 41.72 40.82 39.90 38.89 37.85 36.81 35.75 |S12| 0.016 0.016 0.016 0.016 0.016 0.016 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.021 0.021 0.021 0.022 0.022 S12 9.07 8.90 8.49 8.44 8.51 8.53 8.75 8.61 8.62 8.56 8.48 8.47 8.93 8.90 8.79 8.80 8.44 8.76 9.00 8.57 8.15 8.28 8.51 8.31 8.40 8.35 8.44 8.61 8.34 7.93 8.02 7.86 7.67 7.24 6.89 6.73 6.86 6.83 6.80 6.74 6.73 6.72 6.86 6.74 6.24 5.69 |S22| 0.847 0.846 0.846 0.845 0.844 0.844 0.843 0.842 0.842 0.841 0.841 0.841 0.841 0.840 0.841 0.841 0.840 0.838 0.845 0.841 0.842 0.843 0.843 0.843 0.844 0.844 0.844 0.843 0.844 0.843 0.843 0.844 0.845 0.843 0.843 0.844 0.843 0.842 0.842 0.842 0.840 0.841 0.840 0.838 0.838 0.839 S22 178.96 178.38 177.74 177.07 176.28 175.55 174.77 173.93 173.12 172.27 170.50 169.75 168.89 168.10 167.34 166.61 166.13 165.24 164.98 166.78 166.27 165.71 165.16 164.60 164.10 163.47 162.87 162.37 161.77 161.24 160.75 160.26 159.69 159.08 158.58 158.07 157.42 156.97 156.47 155.83 155.29 154.74 154.18 153.62 153.16 171.37
ARCHIVE INFORMATION
MRFG35003M6T1 6 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 180 mA (continued)
f GHz 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 3.75 3.8 3.85 3.9 3.95 4 4.05 4.1 4.15 4.2 4.25 4.3 4.35 4.4 4.45 4.5 4.55 4.6 4.65 4.7 4.75 4.8 4.85 4.9 4.95 5 S11 |S11| 0.946 0.946 0.945 0.945 0.945 0.944 0.943 0.943 0.944 0.941 0.941 0.941 0.940 0.939 0.940 0.940 0.939 0.941 0.939 0.939 0.939 0.940 0.939 0.940 0.941 0.941 0.942 0.942 0.941 0.940 0.941 0.941 0.939 0.939 0.939 0.938 0.938 0.938 0.937 0.935 0.935 0.934 0.932 0.932 0.929 151.55 150.81 150.11 149.30 148.44 147.58 146.55 145.54 144.52 143.47 142.43 141.33 140.22 139.25 138.09 137.05 136.07 135.06 134.20 133.35 132.47 131.67 130.89 130.26 129.57 128.98 128.44 128.03 127.57 127.14 126.75 126.39 125.97 125.64 125.36 124.98 124.55 124.20 123.76 123.17 122.58 121.93 121.14 120.43 119.55 |S21| 0.787 0.778 0.770 0.762 0.754 0.747 0.739 0.732 0.725 0.718 0.711 0.704 0.697 0.689 0.682 0.675 0.668 0.661 0.653 0.646 0.639 0.632 0.625 0.619 0.613 0.608 0.602 0.598 0.593 0.589 0.585 0.581 0.578 0.575 0.573 0.571 0.570 0.571 0.570 0.569 0.569 0.570 0.570 0.571 0.573 S21 34.63 33.54 32.46 31.37 30.25 29.09 27.89 26.69 25.53 24.33 23.09 21.89 20.67 19.44 18.26 17.08 15.88 14.68 13.50 12.39 11.29 10.20 9.15 8.10 7.10 6.11 5.10 4.14 3.17 2.15 1.21 0.25 - 0.74 - 1.67 - 2.59 - 3.50 - 4.53 - 5.52 - 6.60 - 7.76 - 8.89 - 9.98 - 11.17 - 12.37 - 13.61 |S12| 0.022 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.024 0.024 0.024 0.024 0.025 0.025 0.025 0.025 0.025 0.025 0.025 0.025 0.025 0.026 0.026 0.026 0.027 0.027 0.027 0.027 0.028 0.028 0.029 0.029 0.030 0.030 0.031 0.031 0.031 0.031 0.032 0.032 0.032 S12 4.64 3.61 2.16 1.54 1.03 0.48 0.15 - 0.33 - 0.41 - 0.52 - 1.22 - 1.40 - 1.31 - 1.58 - 1.85 - 2.29 - 2.75 - 3.55 - 4.69 - 5.45 - 6.34 - 6.85 - 6.90 - 6.60 - 6.63 - 6.67 - 7.00 - 7.30 - 7.73 - 8.12 - 8.11 - 8.33 - 8.73 - 8.92 - 9.42 - 9.66 - 10.28 - 10.87 - 11.91 - 13.22 - 14.16 - 14.45 - 14.82 - 14.82 - 14.83 |S22| 0.836 0.836 0.837 0.835 0.835 0.837 0.835 0.834 0.836 0.835 0.834 0.834 0.834 0.832 0.833 0.834 0.832 0.831 0.832 0.831 0.830 0.831 0.831 0.830 0.830 0.831 0.830 0.828 0.828 0.827 0.826 0.826 0.825 0.823 0.823 0.823 0.822 0.821 0.821 0.819 0.817 0.817 0.816 0.815 0.815 S22 152.55 152.02 151.54 150.98 150.40 149.89 149.35 148.72 148.13 147.62 146.44 145.89 145.40 144.66 144.11 143.59 142.91 142.34 141.92 141.27 140.64 140.02 139.40 138.76 138.17 137.56 136.87 136.20 135.56 134.85 134.13 133.44 132.68 131.92 131.23 130.45 129.60 128.79 127.98 127.09 126.23 125.41 124.46 123.55 147.01
ARCHIVE INFORMATION
MRFG35003M6T1 RF Device Data Freescale Semiconductor 7
ARCHIVE INFORMATION
NOTES
MRFG35003M6T1 8 RF Device Data Freescale Semiconductor
NOTES
MRFG35003M6T1 RF Device Data Freescale Semiconductor 9
NOTES
MRFG35003M6T1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
0.146 3.71
0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
G
RF Device Data Freescale Semiconductor
EEEE E EEEEEE EEE EEEEEE E EEEEEE E EEEEEE E
1 3 ZONE X
2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
S
VIEW Y - Y
CASE 466 - 03 ISSUE D PLD - 1.5 PLASTIC
MRFG35003M6T1 11
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MRFG35003M6T1
Rev. 12 4, 1/2006 Document Number: MRFG35003M6T1
RF Device Data Freescale Semiconductor

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